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Category:Multiplayer and single-player video games1. Field of the Invention
The present invention relates to a method for producing a group III nitride compound semiconductor light emitting device, in particular, to a method for producing a group III nitride compound semiconductor light emitting device having high light extraction efficiency.
2. Description of the Related Art
A group III nitride compound semiconductor light emitting device using a group III nitride compound semiconductor has been in the spotlight of attention in recent years because the group III nitride compound semiconductor is a direct transition type semiconductor light emitting device emitting light having a short wavelength.
The group III nitride compound semiconductor light emitting device has a lamination structure of a sapphire substrate and a group III nitride compound semiconductor thin film. In the thin film, at least a light emitting layer composed of a group III nitride compound semiconductor is disposed on the substrate. For example, JP-A-2003-340835 (patent document 1) discloses a structure having a p-type GaN layer, an n-type GaN layer and an active layer composed of InGaN, as a light emitting layer on a sapphire substrate. Furthermore, JP-A-2004-302699 (patent document 2) discloses a structure having a p-type GaN layer, an n-type AlGaN layer and an active layer composed of InGaN, as a light emitting layer on a sapphire substrate.
The aforementioned light emitting layer is composed of a group III nitride compound semiconductor having an In composition ratio of 50 at % or more. Therefore, the light emitted from the active layer composed of InGaN is not absorbed into the substrate, but can be extracted to the outside. On the other hand, when the In composition ratio is less than 50 at %, the light cannot be extracted to the outside because the light is absorbed into the substrate. As a result be359ba680
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